PART |
Description |
Maker |
ADAPTERS-TYPE-NSMA TYPE-NSMA TYPE-N_SMA ADAPTERS-T |
50OHM/ DC to 18 GHz 50OHM / DC to 18 GHz 50OHM, DC to 18 GHz 50OHM, DC to 18 GHz
|
RF连接 MINI[Mini-Circuits] http://
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MSWT-4-20 |
50ohm Transfer, DC to 2.0 GHz Low Video Leakage
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http://
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VNA-23 |
.: -25C to 70C/40C to 70C, Low Ripple & Noise, High Efficiency up to 76%,Single & Dual Ouputs, Regulated, Switching High Directivity Monolithic Amplifier 50OHM 0.5 to 2.5 GHz
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MINI[Mini-Circuits]
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IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR |
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET(减振钢板基本\u003d- 60V的,的Rds(on)\u003d 0.50ohm,身份证\u003d- 6.7A Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A) HEXFET? Power MOSFET -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp. IRF[International Rectifier]
|
IRFI9640 IRFI9640G |
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-6.1A) Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A) Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-6.1A) -200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
IRF9640S IRF9640STRL IRF9640SPBF IRF9640STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A) Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-11A)
|
IRF[International Rectifier]
|
FAR-F5KA-897M50-D4DC |
EGSM Tx (50/50ohm Unbalance)
|
Fujitsu Component Limited.
|
RFP-050100-2X50-21 RFP-050100-2X50-2 |
Chip Termination 5 Watts, 50ohm
|
Anaren Microwave
|
RFP-050060-15X50-2 |
Chip Terminations 4 Watts, 50ohm
|
Anaren Microwave
|
RFP-375375-6Z50-2 |
Surface Mount Terminations 30 Watts, 50ohm
|
Anaren Microwave
|
RFP-100200N4Z50-2 |
Aluminum Nitride Terminations 10 Watts, 50ohm
|
Anaren Microwave
|
3W525S |
Balun Transformers 50ohm to 25ohm Balanced
|
Anaren Microwave
|